TC1202 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1 / 4 super low noise gaas fets features low noise figure: nf = 0.5 db typical at 12 ghz photo enlargement high associated gain: ga = 12 db typical at 12 ghz lg = 0.25 m, wg = 300 m all-gold metallization for high reliability tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1202 is a gaas pseudomorphic high electron mobility transistor (phemt) chip, which has very low noise figure and high associated gain. the device can be used in circuits up to 30 ghz and suitable for low noise application including a wide range of commercial and military applications. all devices are 100% dc tested to assure consistent quality. all bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. electrical specifications (t a =25 c) symbol conditions min typ max unit nf noise figure at v ds = 4 v, i ds = 25 ma , f = 12ghz 0.5 0.7 db g a associated gain at v ds = 4 v, i ds = 25 ma, f = 12ghz 11 12 db i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 90 ma g m transconductance at v ds = 2 v, v gs = 0 v 100 ms v p pinch-off voltage at v ds = 2 v, i d = 0.6 ma -1.0 volts bv dgo drain-gate breakdown voltage at i dgo =0.15 ma 5 8 volts r th thermal resistance 120 c/w note: * for the tight control of the pinch-off voltage . TC1202?s are divided into 3 groups: (1) TC1202p0710 : vp = -0.7v to -1.0v (2) TC1202p0811 : vp = -0.8v to -1.1v (3) TC1202p0912 : vp = -0.9v to -1.2v in addition, the customers may specify their requirements.
TC1202 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2 / 4 absolute maximum ratings (t a =25 c) typical noise parameters (t a =25 c) v ds = 4 v, i ds = 25 ma symbol parameter rating v ds drain-source voltage 5 v v gs gate-source voltage -3.0 v i ds drain current i dss i gs gate current 300 a p in rf input power, cw 20 dbm p t continuous dissipation 400 mw t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c opt frequency (ghz) nf opt (db) g a (db) mag ang rn/50 2 0.31 20.6 0.90 10 0.64 4 0.37 17.2 0.81 20 0.45 6 0.41 14.8 0.74 37 0.35 8 0.47 13.1 0.69 57 0.29 10 0.52 12.1 0.64 77 0.24 12 0.58 11.4 0.58 95 0.20 14 0.71 10.8 0.55 113 0.16 16 0.88 10.4 0.52 130 0.11 18 1.04 9.9 0.51 151 0.08 chip dimensions units: micrometers gate pad: 55 x 60 chip thickness: 100 drain pad: 55 x 60 source pad: 55 x 169 s s g d 280 12 290 12
TC1202 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3 / 4 typical scattering parameters (t a =25 c ) v ds = 4 v, i ds = 25 ma frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.9823 -33.16 6.5659 156.94 0.0318 70.67 0.6019 -18.38 3 0.9641 -48.24 6.2124 146.39 0.0451 61.99 0.5794 -26.63 4 0.9438 -61.87 5.8010 136.77 0.0562 54.23 0.5540 -33.99 5 0.9239 -73.98 5.3750 128.09 0.0650 47.41 0.5288 -40.46 6 0.9058 -84.62 4.9624 120.28 0.0720 41.46 0.5056 -46.12 7 0.8900 -93.94 4.5784 113.25 0.0775 36.28 0.4855 -51.07 8 0.8766 -102.10 4.2290 106.86 0.0818 31.75 0.4687 -55.44 9 0.8654 -109.26 3.9151 101.02 0.0852 27.76 0.4551 -59.33 10 0.8561 -115.58 3.6347 95.63 0.0878 24.22 0.4445 -62.83 11 0.8485 -121.18 3.3847 90.61 0.0899 21.04 0.4367 -66.01 12 0.8423 -126.18 3.1617 85.91 0.0916 18.18 0.4311 -68.94 13 0.8371 -130.67 2.9623 81.47 0.0929 15.57 0.4276 -71.66 14 0.8329 -134.73 2.7836 77.25 0.0940 13.18 0.4259 -74.21 15 0.8295 -138.41 2.6227 73.22 0.0948 10.97 0.4256 -76.61 16 0.8267 -141.77 2.4775 69.34 0.0955 8.92 0.4267 -78.89 17 0.8245 -144.86 2.3458 65.61 0.0960 7.00 0.4289 -81.07 18 0.8227 -147.71 2.2260 62.00 0.0964 5.19 0.4321 -83.16 * the data does not include gate, drain and source bond wires. small signal model, v ds = 4 v, i ds = 25 ma 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 0.1 0.01 per div s12 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 18 ghz swp min 2 ghz mag max 8 2 per div s21 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s22
TC1202 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4 / 4 schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.045 nh rs 1.12 ohm rg 0.79 ohm ls 0.0005 nh cgs 0.361 pf cds 0.084 pf ri 1.47 ohm rds 193.0 ohm cgd 0.031 pf rd 0.920 ohm gm 94.9 ms ld 0.024 nh t 2.13 psec chip handling die attachment: conductive epoxy or eutectic die attach is recommended. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at stage temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 220 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v.
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